Abstract
White light-emitting InGaN∕GaN diode with an InGaN underlying layer grown on the (0001) sapphire substrate was fabricated by low pressure metal-organic vapor phase epitaxy. The electroluminescence measurements show that the emitted white light is composed of blue and yellow lights, centered at around 440 and 570nm, respectively, for an injection current of 20mA. Cross-sectional transmission electron microscopy reveals that In-rich quantum dots were formed in InGaN wells due to phase separation of indium. It is suggested that the yellow and blue lights come from In-rich quantum dots and the low-indium regions, respectively, in InGaN quantum wells.
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