Abstract
A strong room temperature green-to-red photoluminescence (PL) emission has been obtained from an In-rich InAlGaN quaternary layer grown on a GaN template using metal organic chemical vapor deposition. The PL decay kinetics could be described by a stretched exponential with the stretching parameter β = 0.40 ± 0.02. The decay time increased with wavelength while β was constant, which indicates significant disorder in the material related to spatial fluctuation of local In concentration. By the addition of blue emission via the insertion of an InGaN layer, a white light emission has been demonstrated from In-rich InAlGaN/InGaN heterostructures.
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