Abstract
The light emission phenomenon from the solid state incandescent light emitting device made of a sputter deposited TiOx film on a p-type silicon wafer has been investigated. Light was emitted from conductive paths embedded in the dielectric film when the stressed voltage was larger than the breakdown voltage. The principle of light emission is the thermal excitation of the nano size conductive path. The emitted light has a high color rendering index of 95. The leakage current, light intensity, and color rendering index increase with the increase of the magnitude of the stress voltage under the continuous voltage stress condition. Under the pulsed voltage driving condition, the emission spectrum does not change with the frequency. The light emission phenomenon lasted for more than 1,000 hours continuously in air with very slight decrease of the intensity, which is accompanied with the reduction of the current.
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