Abstract
Thin-film electroluminescent (TFEL) device has been widely introduced with various emitting materials owing to their flexible application in optoelectronics. Particularly, the development of the white emission TFEL has increased the interest in fabrication approaches and structures. Herein, a white-emitting Ce3+-doped bi-phase calcium silicate film as emitting oxide has been synthesized by a facile all-solution process on a silicon wafer, so-called, metal-oxide-semiconductor-EL. Under alternating current source, it emits a white color from blue and yellow spectra due to the f-d transitions of Ce3+ ions in two different crystal phases (CaSiO3 and Ca2SiO4, respectively), which is close to the CIE standard illuminant D65. Beyond a threshold voltage of 10 V, it shows a gradual increment in EL intensity with varying voltage and frequency.
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