Abstract
Photodetectors with internal gain are of great interest for imaging applications, since internal gain reduces the effective noise of readout electronics. High-gain photodetectors have been demonstrated, but only individually rather than as a full array in a camera. Consequently, there has been little investigation of the interaction between camera complementary metal oxide semiconductor (CMOS) electronics and the slow response time that high-gain photodetectors often exhibit. Here we show that this interaction filters shot noise and causes noise statistics to differ from the common Poisson distribution. As an example, we investigate a 320×256 array of InGaAs/InP high-gain phototransistors bonded to a CMOS readout chip. We demonstrate the filtering effects and discuss their consequences, including new (to the best of our knowledge) methods for extracting gain and increasing dynamic range.
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