Abstract
With short current pulses, the output power of semiconductor lasers is limited by non-thermal internal loss mechanisms. Two-photon absorption (TPA) was recently proposed as dominating photon loss process. We investigate this claim by advanced numerical laser simulation that includes all relevant mechanisms self-consistently. Using common material parameters, we obtain good agreement with the measured performance up to 90-W output power. Carrier leakage and free-carrier absorption are identified as the main saturation mechanisms, followed by longitudinal spatial hole burning. Contrary to earlier studies, TPA and gain compression are found negligible.
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