Abstract
For the first time, the wetting behavior of SiC ceramics modified by ion bombardment was studied and the interfacial microstructure was characterized. An amorphous layer was formed on the SiC surface, which has significant influence on the wetting behavior and the interfacial microstructure of SiC/AgCu–Ti wetting system. The interfacial reactions were accelerated when filler melted on the bombarded SiC surface, and the spreading on the bombarded SiC ceramics was controlled by interfacial reactions firstly and then by diffusion. The spreading rates, kr, were denoted as kr,i = 42.28exp (-456.2/RT) for bombarded SiC, and kr,0 = 28.62exp (-329.9/RT) for the original one. Ion bombardment improved the bonding quality of ceramics/droplet interface effectively, a mixed reaction layer containing TiC and Ti5Si3 was formed and no reactant stratification was occurred at the interface of SiC/droplet.
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