Wetting and reaction between Si droplet and SiO2 substrate

Abstract

The wetting and reaction between Si melt and SiO2 substrate were investigated as a function of the atmosphere, temperature, and degree of vacuum. The results revealed that below 2 Torr with an Ar flow, the wetting angle is finally 90°. The Si droplet was stationary at a wetting angle of 90°. Videos indicated that the droplets moved and vibrated; Above 20 Torr, the Si droplet vibrated up and down with a frequency of approximately 2 Hz, thereby changing the wetting angle. Further, the droplet remained stationary on a substrate on which grooves with a width of 100 μm and depth of 100 μm were etched with a pitch of 1 mm. The presence of grooves or dimples on the substrates facilitated the leakage of SiO gas; as a result, the Si droplet did not vibrate. A vibration model was proposed in which the SiO gas produced at the interface between the Si droplet and the substrate according to the reaction Si + SiO = 2SiO expands and leaks continuously.