Abstract
AbstractThe wettability of SiC by pure aluminium and aluminium alloys has been measured using the dip coverage method. It was found that alloying elements such as silicon, manganese, iron, and elements of the IVA, VA, and VI groups improved wettability by decreasing the incubation period and/or increasing the wetting rate. It was possible to analyse, the wetting process by assuming that the wetting rate was proportional to the amount of nuclei on the interface and to the unwetted area. The values of overall reaction rate constant ko and incubation period τ obtained from this theoretical analysis had a periodic relation to the atomic number of the element.MST/561
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