Wettability and joining of reaction-bonded silicon carbide (RBSC) by Ti–Si eutectic alloy

Abstract

The high-strength joining of reaction-bonded silicon carbide (RBSC) is pivotal for its application in the semiconductor field. In this paper, the wetting and joining mechanism of Ti–Si eutectic alloy on RBSC were investigated. The contact angles observed between Ti–Si eutectic alloy and RBSC were approximately 1.9°, indicating the favorable wettability and demonstrating the feasibility of bonding RBSC joints. The temperature bending strength of the joints initially increased and then decreased as the brazing temperature increased. Moreover, the shear strength of approximately 107.38 ± 5.56 MPa was achieved at 1350 °C for 30 min. Notably, the diffusion and amalgamation of atoms, lead to the establishment of stronger bonds between adjacent particles. Thus, the Ti–Si eutectic alloy brazing filler formed a direct connection with the RBSC matrix, with Si2Ti infiltrating into the base metal on both sides. The utilization of Ti–Si eutectic alloy brazing filler in RBSC joints exhibits promising prospects.