Abstract
Hydroxyapatite-like thin films on silicon substrate were deposited using atomic layer deposition and were subjected to irradiation with Ar ions accelerated through 0.6–1.2kV as well as 2MeV 16O+ ions. After low energy Ar irradiation a significant reduction in contact angle was observed. However, the Ca/P atomic ratio remained unchanged. No reduction in contact angle was seen for high energy 16O+ irradiation. Atomic force microscopy showed the enhancement of floral-like pattern after low energy Ar bombardment while high energy oxygen irradiation lead to raised islands on as-deposited films.
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