Abstract
A small specific surface area and severe charge carrier recombination greatly limit the photocatalytic efficiency of semiconductors. Herein, we developed a novel wet-chemical intercalation strategy by using the NaBH4 reagent for in situ intercalation-assisted expansion and surface/interface reconstruction of Bi4TaO8Br, which exhibits an enhanced specific surface area and charge carrier separation features. This work highlights intercalation of semiconductors for achieving enhanced photocatalytic performance and provides a new idea to synergistically regulate the morphology and surface/interface composition of semiconductors.
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