Abstract
In this work the etching kinetics of (100) InGaAs is studied at the nanoscale with ICP-MS for HCl/H2O2 mixtures. It is shown that the etch rate is controlled by both the concentration of the acid and the oxidizing agent. Surprisingly, an increase in etch rate is observed when the HCl concentration is decreased from 1M to 0.01 M. This can be ascribed to a surface termination effect. AFM shows that the surface roughens after exposure to 1M HCl/0.01M H2O2, possibly due to buildup of amorphous As. Ultimately, the surface needs to be cleaned of oxide. HCl can be used for this purpose. Contact angle measurements indicate that a minimum of 1M HCl solution is needed for oxide removal.
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