Abstract
Amorphous silicon oxide quantum dots, with a quantum yield of 0.47 and blue emission fixed at 2.85 eV (433 nm), were obtained via two wet steps: first silicon nanowires reacted with potassium hydroxide at 50 °C, and then the resultants were kept in the dark and exposed to air at 20 °C. The silicon nanowires were synthesized in a high-temperature tube furnace using quartz powder and hydrogen as starting materials, and these products had less oxide outer cover and were ready to react with potassium hydroxide. The transmission electron microscopy was employed in order to characterize the amorphous quantum dots of silicon oxide.
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