Abstract
A mild wet nitridation procedure using hydrazine-based solutions has been developed for GaAs (100) surface passivation. Both x-ray photoelectron spectroscopy and spectroscopic ellipsometry show that this nitridation procedure results in a very thin, coherent, and homogeneous GaN layer that is very stable in air. Photoluminescence data show a strong enhancement of the intensity as compared to that of an as-cleaned GaAs sample, indicating that this nitrided layer provides both chemical and electronic passivation of GaAs surfaces. The chemical mechanism of nitridation is discussed.
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