Abstract
This study was aimed to investigate the thickness dependent morphological changes of Mn films deposited on GaAs substrates by thermal evaporation technique. Ni films were deposited under same conditions to perform comparative study of the morphological changes with respect to the Mn films. The scanning electron microscopy and atomic force microscopy studies revealed ripple-shaped structure of Mn film with good periodicity, while Ni film only exhibited small granules deposited throughout the surface. The influence of the thickness of the Mn film in producing the ripple structure was clearly observed. In addition, the annealing time was considered as the major parameter to control the ordering of the ripple structure. X-ray diffraction pattern indicated the formation of different phases of Ga-Mn and Mn-As due to diffusion of atoms during annealing. A model for the creation of stress-driven microstructure is proposed which indicates that Mn thin films grow on GaAs substrates in three stages: in the primary stage, the growth occurs via two-dimensional nucleation process; as the thickness increases, the stress is released by the film via creation of additional surface roughness which produce ripples; and finally an island-like growth occurs because of the non-uniform distribution of stress along the surface of the film.
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