Abstract
The structural effect of coupling between quantum wells on differential gain is analyzed. Band-mixing effects within the Luttinger–Kohn (LK) effective mass equation are rigorously included. The analysis is performed for a GaAs/Al0.3Ga0.7As system. It shows that well coupling enhances the differential gain for narrow quantum wells (30 Å) for barriers within the range of 20–50 Å depending on carrier concentration. For wide wells (100 Å), the increase of differential gain is observed only for barriers thinner than 10 Å. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 21: 282–286, 1999.
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