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Abstract
A theory of weak localization is constructed for p-type semiconductor structures with a complex Γ8 valence band. An equation for the Cooperon is obtained and solved in the case when spin relaxation cannot be treated as a perturbation. The anomalous magnetoresistance is calculated in bulk samples as a function of the external deformation and in quantum wells as a function of the doping level. The results of the theory are represented in a form that allows direct comparison with experiment.
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