Abstract
The phase coherence length L Ø, its temperature dependence and the spin-orbit scattering length L SO in Al 0.25Ga 0.75As/In 0.2Ga 0.8As/GaAs wires fabricated by electron-beam lithography and CH 4/H 2 Reactive Ion Etching (RIE), were extracted by fitting a 1-dimensional weak localization theory to two-terminal measurements in the temperature range between 2 K and 50 K. The scattering mechanism was found to be Nyquist (electron-electron collisions with small energy transfer).
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