Abstract
We here report the manifestation of weak localization effects in the electrical resistivity of TaN (001) films grown on MgO (001) substrates by a pulsed laser deposition technique. These films were characterized by X-ray diffraction and Rutherford backscattering. High precision electrical resistivity measurements were performed on these films in the temperature range 12–300 K. A careful analysis of data showed these films to lie in the weakly localized regime with negative temperature coefficient of resistivity throughout the whole temperature range of study. A crossover from 2D localization at lower temperatures to 3D localization at higher temperatures was observed.
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