Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei-Hsiang Wang,Pei-Hsun Jiang,Po-Yung Liao,Syue-Ru Lyu,Shu-Hao Liu,Ting-Chang Chang,Elica Heredia

doi:10.1109/led.2017.2786547

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei-Hsiang Wang, Pei-Hsun Jiang + Show 5 more

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https://doi.org/10.1109/led.2017.2786547

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Journal: IEEE Electron Device Letters	Publication Date: Feb 1, 2018
Citations: 24

Affiliation: National Taiwan Normal University, National Sun Yat-sen University

#Weak Antilocalization #Interface Disorder + Show 8 more

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Abstract

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors. Our study unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

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