Abstract
Carrier/exciton localization in InGaN quantum wells (QWs) for green laser diodes fabricated on semi-polar {2021} GaN substrates is assessed using time-resolved photoluminescence (TRPL) spectroscopy. The estimated characteristic energy, which represents the localization depth in a {2021} InGaN QW, is 15.1 meV. This value is much smaller than that reported for c-plane green InGaN QWs, indicating a high compositional homogeneity of {2021} InGaN QWs and consequently suggesting that the GaN semi-polar {2021} plane is suitable for fabricating green laser diodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
