Weak antilocalization measurements on a 2‐dimensional electron gas in an InGaSb/InAlSb heterostructure

Abstract

In this article a study of the weak antilocalization effect in an InGaSb/InAlSb two-dimensional electron gas (2DEG) as a function of temperature is presented. Detailed information about the spin-splitting and transport parameters of the electronic system was obtained by fitting the model of Golub [L. E. Golub, Phys. Rev. B 71, 235310 (2005)] to the magnetoconductance data. A good agreement between the model and the experiment was achieved, taking into account only one of the k-linear spin-orbit coupling terms. Zero field spin-splitting energy was estimated to be of 1 meV. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)