Abstract
A wavy nanorelief is formed on the ion-bombarded surface of amorphous silicon. The nanorelief can be transferred from these films to the surface of various materials (glass, polyimide, fianite, and GaAs) by means of ion sputtering. The transferred nanorelief geometry is retained to within a depth equal to the initial relief amplitude in amorphous silicon. In the course of subsequent sputtering, evolution of the nanorelief amplitude is determined by various processes accompanying ion bombardment, rather than by the sputtering alone as characterized by the sputtering yield.
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