Abstract
A wavy nanorelief is formed on the ion-bombarded surface of amorphous silicon. The nanorelief can be transferred from these films to the surface of various materials (glass, polyimide, fianite, and GaAs) by means of ion sputtering. The transferred nanorelief geometry is retained to within a depth equal to the initial relief amplitude in amorphous silicon. In the course of subsequent sputtering, evolution of the nanorelief amplitude is determined by various processes accompanying ion bombardment, rather than by the sputtering alone as characterized by the sputtering yield.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
