Abstract
For the first time to the authors' knowledge, rare-earth doped fibre and semiconductor lasers have been passively configured to exploit the available wide gain-bandwidths with flexibility by simply connectorising the lasing medium and fibre reflection gratings. Lasing has been demonstrated over 93 nm from a robust single semiconductor laser module. BER measurements at 1.2 Gbit/s have been performed at 1300 nm.
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