Abstract
Control and the selection of the ground state emission and/or the excited state emission of an InAs quantum dot laser have been demonstrated. By controlling the currents injected into each section of a two-section cavity, switching between the ground state emission and the excited state emission with a separation of 100nm was achieved. With a constant total current, either ground state lasing (∼1.3μm), excited state lasing (∼1.2μm), or dual state lasing can be obtained simply by adjusting the current ratio between the two sections.
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