Wavelength-Shifted Yellow Electroluminescence of Si Quantum-Dot Embedded 20-Pair SiNx/SiOx Superlattice by Ostwald Ripening Effect

Abstract

Yellow electroluminescence (EL) of a 20-pair Si-rich SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> superlattice is demonstrated by plasma-enhanced chemical vapor deposition (PECVD) and annealing process. After annealing at 900 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C for 30 min, two photoluminescence (PL) peaks at 480 and 570 nm are observed to blue-shift the PL wavelength, and the corresponding peak intensity is enhanced due to the self-aggregation of Si quantum dots (QDs). When increasing the annealing temperature to 1050 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">°</sup> C , the PL peaks caused by the aggregated Si-QDs in SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> and SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> layers red-shift to 500 and 600 nm, thereby shifting the PL peak wavelength to 520 nm. Such a wavelength red-shifting phenomenon is mainly attributed to the formation of large Si-QDs due to the Ostwald ripening effect. The turn-on voltage and the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> - <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i> slope of the ITO/SiN <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /p-Si/Al LED device are 200 V and 15.5 kV/mA with Fowler-Nordheim (FN) tunneling assistant carrier transport under an effective barrier height of 1.3 eV. Maximum output-power-current slope of 0.2 μW/A at power conversion efficiency of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-6</sup> is detected.