Abstract
We report on growth, fabrication and characterization of metal-semiconductor-metal (MSM) photodetectors based on periodic heterostructures with ZnCdS quantum wells separated by ZnMgS and ZnS barrier layers. Heterostructures were grown on semi-insulating GaP substrates by MOVPE. Detecting properties of the MSM-heterophotodiodes have been investigated. We observe electrically tunable spectral response of these detectors. At low bias detectors provide narrowband response at the wavelength 350 nm with FWHM = 18 nm. Increasing bias shifts maximum detector sensitivity at the wavelength 450 nm while narrowband response at 350 nm remains. Thus, a two-color detection of light emission is provided.
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