Abstract
We report on the utilization of MgyZn1−yO/MgxZn1−xO heterostructures having two different Mg-contents (0 < y < x ≤ 0.5, wurtzite structure) for the construction of wavelength selective metal-semiconductor-metal ultraviolet photodetectors. The MgxZn1−xO thin film acts as an optical edge filter and the MgyZn1−yO layer is the active layer of the devices. A FWHM of only 7 nm was achieved for a photodetector operating around 3.4 eV and the center of band (370–325 nm) was shifted by different y:x-combinations. A maximum spectral photo response of about 1.8 A/W was achieved in visible-blind range. An internal gain mechanism in the device was observed and attributed to trapping of minority carriers at PdOz/(Mg,Zn)O-interface.
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