Wavelength Selectable Hybrid III–V/Si Laser Fabricated by Wafer Bonding

Abstract

This letter reports on a hybrid III–V on silicon arrayed waveguide grating laser, fabricated by a wafer bonding technique. The III–V materials provide the optical gain for the laser while an arrayed waveguide grating and Bragg reflectors on silicon on insulator complete the cavity for single mode selection and laser feedback. The laser shows a threshold current <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">${\sim}{\rm 40}~{\rm mA}$</tex></formula> , and a maximum coupled power to a single mode fiber of <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${-}{\rm 2.2}~{\rm dBm}$</tex></formula> . Independent lasing of five wavelength channels spaced by 392 GHz is demonstrated.