Abstract
IR transmission measurements are now widely used as a non-destructive technique in compositional assessment and growth-mechanism studies of bulk-grown mixed-semiconductor crystals, where problems of segregation result in composition variations in both axial and radial directions, necessitating detailed measurements on a small scale. The design principles and constructional details of a computer-controlled, double-beam IR spectrophotometer covering the range 1.5–14 μm and capable of producing transmission profiles and room-temperature cut-on wavelength maps of slices of material on a millimetre-sized grid are described. The associated computer software is also detailed. Results are presented for the mixed semiconductor Cd x Hg 1− x Te prepared by the Bridgman growth technique. Measurement times are approx. 10 min for a short-wavelength, 13mm dia slice and 30 min for a long-wavelength slice. These results can be related back to the growth mechanisms and help to predict the suitability of material for device manufacture.
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