Wavelength limits for InGaN quantum wells on GaN

Markus Pristovsek

doi:10.1063/1.4811560

Abstract

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x&gt;40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x&lt;40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600 nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

Highlights

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts
For high indium contents x > 40% the resulting wavelength decreases because quantum confinement dominates
For low indium content x < 40% the electron hole wave function overlap is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600 nm for QWs with 40%-50% indium content

Summary

Introduction

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x > 40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x < 40% the electron hole wave function overlap (and radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit.

Objectives

Results

Conclusion