Wavelength elongation of GaInNAs lasers beyond 1.3 μm

Abstract

The applicability of GaInNAs to long wavelength lasers is discussed by fabricating 1.4 µm GaInNAs quantum well (QW) lasers and by formation of self-organised GaInNAs quantum dots (QDs) grown by chemical beam epitaxy (CBE). A broad lasing spectrum at 77 K and a wide wavelength spacing at room temperature were observed for 1.4 µm QW lasers. The lasing spectrum was similar to that of InAs QD lasers and indicates the existence of potential fluctuation in high nitrogen GaInNAs QWs. Self-organised GaInNAs QD is also investigated as a novel long wavelength material. The nitrogen introduction causes an increase in the nucleus of the QD formation. Understanding and control of the influence of nitrogen introduction are important not only to realise high quality QDs but also to improve the compositional fluctuations in QWs. The observed result is valuable for the realisation of high-performance long (>1.3 µm) wavelength GaInNAs lasers to be used in the next generation of optical network systems.