Wavelength determination of ion-induced ripples

Abstract

A novel approach for analysis of ion-induced ripples on a surface is presented. In a completely different model from what has been previously presented, thin stressed amorphous layer is considered to have elastic properties. Ion-induced compressive stress is anticipated to have both horizontal and vertical components. Ripples are supposed to form due to bending process of thin stressed layer under horizontal component of compressive stress. A relationship for ripple wavelengths is provided by minimizing bending and compression energy of thin stressed amorphous layer. The consistency of evaluated wavelength with experimental findings is explored.