Abstract
An in situ observation of the dielectric constant ε m of thermally evaporated continuous aluminum (Al) thin films has been made in the wavelength range 500–1000 nm by excitation of surface plasmon polaritons in the attenuated total reflection configuration. Such a dependence of the Al films fabricated in an ultrahigh vacuum environment has been modeled with Ashcroft and Sturm's theory on an optical conductivity, Fuchs and Sondheimer's theory and Mayadas and Shatzkes' theory on an electrical conductivity of metal films. By analysing ε m as the sum of an interband and Drude free-electron component, we have shown that electrons are scattered by a grain boundary and a surface. For oxide-contaminated films, the dielectric constant has been measured as a function of wavelength and the results have been interpreted by considering the ε m of films free from oxide contamination.
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