Abstract

The effect of laser irradiation on Si field emitter arrays has been investigated as a function of wavelength using different harmonics of a diode-pumped Q-switched Nd:YLF laser. The laser wavelength was varied as 1047 nm, 523 nm, 349 nm and 262 nm. Infrared (λ=1047 nm) or visible (λ=523 nm) laser irradiation did not change the emission current, while UV (λ=349 nm) laser irradiation increased the emission current due to the cleaning of the emitter tip surface. On the other hand, UV (λ=262 nm) laser irradiation resulted in a temporary reverse current. Desorption gas species were found to be H2O gases during UV (λ=349 nm) laser irradiation. These gas species were related to with the improvement in emission current.

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