Abstract
A new concept of semiconductor wafer bonding, mediated by optical wavelength conversion materials, is proposed and demonstrated. The fabrication scheme provides simultaneous bond formation and interfacial function generation, leading to efficient device production. Wavelength-converting functionalized semiconductor interfacial engineering is realized by utilizing an adhesive viscous organic matrix with embedded fluorescent particles. The bonding is carried out in ambient air at room temperature and therefore provides a cost advantage with regard to device manufacturing. Distinct wavelength conversion, from ultraviolet into visible, and high mechanical stabilities and electrical conductivities in the bonded interfaces are verified, demonstrating their versatility for practical applications. This bonding and interfacial scheme can improve the performance and structural flexibility of optoelectronic devices, such as solar cells, by allowing the spectral light incidence suitable for each photovoltaic material, and photonic integrated circuits, by delivering the respective preferred frequencies to the optical amplifier, modulator, waveguide, and detector materials.
Highlights
The wafer bonding technique [1,2,3] is used to generate semiconductor heterostructures with low defect densities, which are difficult to obtain by the conventional epitaxial growth methods, owing to crystalline lattice mismatches
As a general design direction, a thicker interlayer provides a sufficient wavelength conversion efficiency and higher bondability by mitigating the semiconductor surface roughness, whereas a thinner interlayer supports the advantages in the device weight, production cost, and throughput
To improve the properties of our wavelength-converting material (WCM)-containing interfaces—such as the mechanical strength, electrical conductivity, and optical transparency—it may be effective to increase the dispersion of WCM by selecting the optimum preparation process conditions, such as the organic solvent species, the spin-coating rotation velocity, and the coating repetition
Summary
The wafer bonding technique [1,2,3] is used to generate semiconductor heterostructures with low defect densities, which are difficult to obtain by the conventional epitaxial growth methods, owing to crystalline lattice mismatches. It improves the performance of hybrid optical transceivers in photonic integrated circuits [15,16,17,18] by delivering suitable frequencies to each optical amplifier, modulator, waveguide, and detector material. Our bonding is performed at room temperature and does not require heating, unlike the conventional wafer direct bonding processes, and exhibits no risk of damaging the active material or retarding the production line
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
