Abstract
Wavelength conversion using cross-gain modulation (XGM) in linear tapered-waveguide semiconductor laser amplifiers (SLAs) has been investigated theoretically and compared with the non-tapered semiconductor laser amplifier. For example, we have found that for the linear tapered-waveguide SLA with a 450 pm cavity length, a higher signal power is required to achieve a similar extinction ratio as obtained by the conventional SLA with the same cavity length. However, a similar extinction ratio is observed for both conventional and linear tapered-waveguide with the cavity length of 1200 pm. The difference between the extinction ratio for up and down conversion is less severe in a linear tapered-waveguide SLA as compared to that for a conventional SLA. The rise time for linear tapered-waveguide is observed to be higher than that for conventional SLA. It is possible to attain extinction ratio conservation using XGM for both up and down conversions in a SLA with a very long cavity length of 2400 μm.
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