Wavelength control across the near IR spectrum with GaInNAs

Abstract

Accurate control of the photoluminescence (PL) emission wavelength over the range of 1.00–1.55μm has been achieved using GaIn(N)As multiple quantum well (MQW) structures, grown by plasma-assisted molecular beam epitaxy. By limiting the In content to 30%, hence limiting the overall strain, wavelength-specific MQWs can be grown through simple control over the N content (0%–5%). High crystalline quality and compositional control are demonstrated using high-resolution x-ray diffraction, secondary-ion mass spectroscopy, PL, and subsequent comparison to theoretical calculations using a ten-band k∙p band-anticrossing model. The results reveal adherence to Vegard’s law over a larger compositional range for GaInNAs than GaNAs.