Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells

C Kumtomkittkul,M Sugiyama,Y Nakano,H Otani,I Waki,Ning Li Ning Li

doi:10.1109/leos.2004.1363150

Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells

C Kumtomkittkul, M Sugiyama + Show 4 more

https://doi.org/10.1109/leos.2004.1363150

Copy DOI

Publication Date: Dec 20, 2004

Affiliation: The University of Tokyo, Japan Science and Technology Agency

#GaN-based Multiple Quantum #GaN-based Quantum Wells + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

We propose waveguide structures for ultrafast optical devices utilizing intersubband absorption in GaN-based multiple quantum wells grown with metalorganic vapor phase epitaxy. The proposed structure can efficiently enhance absorption in the GaN/AlN MQW structure suitable for device fabrication.

Full Text