Wavefunctions and Optical Gain in In0.24Ga0.76N/GaN Type-I Nano-heterostructure Under External Uniaxial Strain

Abstract

Wavefunctions and optical gain in a single In0.24Ga0.76N quantum well sandwiched between the GaN barriers has been reported. Optical gain within x-polarization and z-polarization have been investigated as quantum well width and external strain variations along [100]. The behavior of quasi Fermi levels for the valance bands and conduction bands have also been investigated. The InGaN/GaN type-I nano-heterostructure has been modeled and studied with the help of six band \( {\text{k}} \cdot {\text{p}} \) formalism. The \( 6\times 6 \) diagonalised \( {\text{k}} \cdot {\text{p}} \) Hamiltonian has been solved to evaluate the light and heavy hole energies. For an injected carrier density of 15 × 1012/cm2, the peak optical gain is found to be 15904/cm at wavelength of 0.48 µm in x-polarization and the peak optical gain is found to be 1576/cm at a wavelength of 0.44 µm in z-polarization.