Abstract
Wave instabilities are studied considering the field dependencies of the drift velocity and the carrier temperature. Wave instabilities caused by negative dependency of the carrier temperature on an external field are derived. These instabilities are associated with the energy (transport) equation. The diffusion instability is derived for an extrinsic semiconductor, and it is shown that a negative value of the effective diffusion coefficient does not always lead to wave instability. The analysis in this paper is equally valid for a collision-dominated, weakly ionized gas plasma although it is presented with reference to semiconductors.
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