Abstract
InAs self‐assembled quantum dots capped with GaAsSb exhibit type‐II band alignment and singly or doubly connected hole wave‐function topology depending on the thickness of the capping layer or the Sb concentration. A configuration interaction analysis of the excitons complexes X0, X−1, and X+1 for different overlayer thicknesses is presented. A characteristic double line structure of the X+1 recombination is predicted for the doubly connected topology. A hallmark is established to identify the optical Aharonov–Bohm transition in addition to the well‐known intensity fade‐out of the X0.
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