Abstract
We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge1−xSnx alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge1−xSnx and relaxed Si1−yGey. Then, a type-I strain-compensated Si0.10Ge0.90/Si0.16Ge0.84/Ge0.94Sn0.06 quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5 × 104 cm−1) and the shift of the direct transition under large Stark effect at 3 V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.
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