Abstract
We report on the synthesis of large-area molybdenum disulfide (MoS2) film on an insulating substrate by means of chemical vapor deposition. A single mixture of molybdenum hexacarbonyl (Mo(CO)6) and dimethyl disulfide (C2H6S2) was utilized as an organic liquid precursor for the synthesis of MoS2 film. Carbon impurities stemming from the dissociation of the organic precursor are effectively removed by water oxidation, and hydrogen gas, which is a by-product of the oxidation of carbon impurities, inhibits the formation of molybdenum oxides. The use of a liquid precursor assisted with water oxidation ensures high reproducibility and full-coverage of MoS2 film for large area, which is not typically achieved with solid precursors such as molybdenum oxide and sulfur powder. We believe that our approach will advance the synthesis of transition metal dichalcogenides.
Highlights
Several methods have been suggested to obtain large-area MoS2 films, including chemical vapor deposition (CVD), atomic layer deposition (ALD), and molecular beam epitaxy (MBE)[18,19,20,21,22,23,24,25,26,27]
Monolayer MoS2 was successfully synthesized via CVD in 2012, and since many researchers have investigated the use of various precursors, growth substrates, and growth parameters, including the pressure, flux of precursor, and temperature, to obtain large-area, high-quality MoS2 films[22,23,24,25]
The MoS2 film was transferred on the SiO2/Si substrate using the conventional poly(methyl methacrylate) (PMMA) method, and it exhibit similar color as that of as-grown MoS2 film, indicating that the MoS2 film was well transferred on the target substrate
Summary
Several methods have been suggested to obtain large-area MoS2 films, including chemical vapor deposition (CVD), atomic layer deposition (ALD), and molecular beam epitaxy (MBE)[18,19,20,21,22,23,24,25,26,27]. CVD has advantages in terms of its low cost, high throughput, and ability to grow large-area, high-quality MoS2 films. Monolayer MoS2 was successfully synthesized via CVD in 2012, and since many researchers have investigated the use of various precursors, growth substrates, and growth parameters, including the pressure, flux of precursor, and temperature, to obtain large-area, high-quality MoS2 films[22,23,24,25]. A combination of diethyl sulfide ((C2H5)2S, liquid phase) and molybdenum hexacarbonyl (Mo(CO)[6], solid phase) was used to grow a monolayer MoS2 film[31]. We report on the use of a single organic liquid precursor in the synthesis of large-area MoS2 film.
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