Warpage and electrical performance of embedded device package, MCeP

Abstract

In recent years, along with miniaturization and high functionality of electronics, many embedded device substrates and packages have been developed by various companies. We have also been developing embedded device package named MCeP, Molded Core embedded Package. Adopting MCeP structure, it was possible to shrink package size and maintain warpage less than 80um. For this study MCeP thickness was 555um, not including BGA ball height. And planning for thinner MCeP, it was necessary to establish a warpage simulation method. Layer thickness effect for MCeP warpage was investigated. Individual layer thickness was simulated for warpage to achieve a less than 400um thickness MCeP. Based on this simulation, a 390um thick MCeP was also manufactured and confirmed that the warpage was less than -80um. MCeP has another beneficial characteristic. It is relatively easy to embedded passive components with IC devices. To increase electrical performance, decoupling capacitor was embedded in MCeP and Power-GND impedance was evaluated. At first, electrical simulation was performed. Then actual samples were manufactured and Power-GND impedance for GHz range was measured. The layers and locations where capacitors were embedded or mounted determined the effectiveness for decreasing Power-GND impedance.