Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

Abstract

The electronic states in 4H-SiC MOS inversion layers are theoretically analyzed using the empirical pseudopotential method (EPM). The analysis shows that the Wannier–Stark localization occurs, which is absent in an effective mass approximation (EMA). The Wannier–Stark localization modifies the electronic states in the MOS inversion layers. A model is proposed to describe the in-plane dispersion of subbands affected by the Wannier–Stark localization. The differences between the EPM and EMA results for the subband energy levels and the in-plane effective masses are discussed.