Wafer-Scale Field-Effect Transistor-Type Sensor Using a Carbon Nanotube Film as a Channel for Ppb-Level Hydrogen Sulfide Detection.

Abstract

Sulfur hexafluoride is widely used in power equipment because of its excellent insulation and arc extinguishing properties. However, severe damage to power equipment may be caused and a large-scale collapse of the power grid may occur when SF6 is decomposed into H2S, SOF2, and SO2F2. It is difficult to detect the SF6 concentration as it is a kind of inert gas. Generally, the trace gas decomposed in the early stage of SF6 is detected to achieve the function of early warning. Consequently, it is of great significance to realize the real-time detection of trace gases decomposed from SF6 for the early fault diagnosis of power equipment. In this work, a wafer-scale gate-sensing carbon-based FET gas sensor is fabricated on a four-inch carbon wafer for the detection of H2S, a decomposition product of SF6. The carbon nanotubes with semiconductor properties and the noble metal Pt are respectively used as a channel and a sensing gate of the FET-type gas sensor, and the channel transmission layer and the sensing gate layer each play an independent role and do not interfere with each other by introducing the gate dielectric layer Y2O3, giving full play to their respective advantages to forming an integrated sensor of gas detection and signal amplification. The detection limit of the as-prepared gate-sensing carbon-based FET gas sensor can reach 20 ppb, and its response deviation is not more than 3% for the different batches of gas sensors. This work provides a potentially useful solution for the industrial production of miniaturized and integrated gas sensors.