Abstract
AbstractWe demonstrate the integration of nanotube networks on 512 individual devices on a full 4‐inch wafer in less than 60 seconds with a roughly 80% yield using dielectrophoresis. We present here investigations of the morphology and electrical resistance of such field aligned networks for different frequencies of the electrical field used to attract the nanotubes to the electrodes. Preliminary data of response to visible light irradiation as well as changes in the humidity indicate that the field aligned networks could be used as sensor components that may well integrate with CMOS due to mild assembly conditions. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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