Abstract
In this paper, we present a study of wafer-level process for deposition of amorphous thin film MoS2 by radio-frequency (RF) magnetron sputtering technique. Thin film deposition was performed in argon atmosphere with pressure around 10-2 to 10-4 Torr, RF power between 100-250 W and temperature from room temperature up to 250°C. X-ray diffraction indicates that the thin films are amorphous. Deposition rate and sulphur concentration showed a clear dependence on variation in RF power. Surface roughness increase as temperature was increased from room temperature up to 250°C. Photocurrent increases about 20% under white light illumination. The thin films are continuous with low roughness which might make it a potential candidate for wafer-scale production for advanced electronics or sensor applications.
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